RESUMEN
We performed a systematic study involving simulation and experimental techniques to develop induced-junction silicon photodetectors passivated with thermally grown SiO2 and plasma-enhanced chemical vapor deposited (PECVD) SiNx thin films that show a record high quantum efficiency. We investigated PECVD SiNx passivation and optimized the film deposition conditions to minimize the recombination losses at the silicon-dielectric interface as well as optical losses. Depositions with varied process parameters were carried out on test samples, followed by measurements of minority carrier lifetime, fixed charge density, and optical absorbance and reflectance. Subsequently, the surface recombination velocity, which is the limiting factor for internal quantum deficiency (IQD), was obtained for different film depositions via 2D simulations where the measured effective lifetime, fixed charge density, and substrate parameters were used as input. The quantum deficiency of induced-junction photodiodes that would be fabricated with a surface passivation of given characteristics was then estimated using improved 3D simulation models. A batch of induced-junction photodiodes was fabricated based on the passivation optimizations performed on test samples and predictions of simulations. Photodiodes passivated with PECVD SiNx film as well as with a stack of thermally grown SiO2 and PECVD SiNx films were fabricated. The photodiodes were assembled as light-trap detector with 7-reflections and their efficiency was tested with respect to a reference Predictable Quantum Efficient Detector (PQED) of known external quantum deficiency. The preliminary measurement results show that PQEDs based on our improved photodiodes passivated with stack of SiO2/SiNx have negligible quantum deficiencies with IQDs down to 1 ppm within 30 ppm measurement uncertainty.
RESUMEN
Below the Earth's crust, temperatures may reach beyond 600 K, impeding the batteries used to power conventional thermometers. Fluorescence intensity ratio based temperature probes can be used with optical fibers that can withstand these conditions. However, the probes tend to exhibit narrow operating ranges and poor sensitivity above 400 K. In this study, we have investigated single and dual layered YVO4: Ln3+ (Ln = Nd, Sm, Eu, Dy, Ho, Er, Tm, Yb) thin films (100-150 nm) for use in fluorescence intensity ratio based temperature sensors in the 300-850 K range. The type of lanthanide emission can be fine-tuned by adjusting the thickness of each layer, and the layered structure allows for emission from otherwise incompatible lanthanide pairs. This novel multi-layered approach enables high sensitivity over a broad temperature range. The highest relative sensitivity was achieved for a dual layered YVO4: Eu3+/YVO4: Dy3+ sample, exhibiting a maximum sensitivity of 3.6% K-1 at 640 K. The films were successfully deposited on all tested substrates (silicon, iron, aluminum, glass, quartz, and steel), and can be applied homogenously to most surfaces without the use of binders. The films are unaffected by water, enabling non-contact temperature sensing in water, where IR thermometers are not an option.