RESUMEN

We report the fabrication of molecular electronic test structures consisting of Au-molecule-Si junctions by first forming omega-functionalized self-assembled monolayers on ultrasmooth Au on a flexible substrate and subsequently bonding to Si(111) with flip-chip lamination by using nanotransfer printing (nTP). Infrared spectroscopy (IRS), spectroscopic ellipsometry (SE), water contact angle (CA), and X-ray photoelectron spectroscopy (XPS) verified the monolayers self-assembled on ultrasmooth Au were dense, relatively defect-free, and the -COOH was exposed to the surface. The acid terminated monolayers were then reacted with a H-terminated Si(111) surface using moderate applied pressures to facilitate the interfacial reaction. After molecular junction formation, the monolayers were characterized with p-polarized backside reflection absorption infrared spectroscopy (pb-RAIRS) and electrical current-voltage measurements. The monolayer quality remains largely unchanged after lamination to the Si(111) surface, with the exception of changes in the COOH and Si-O vibrations indicating chemical bonding. Both vibrational and electrical data indicate that electrical contact to the monolayer is formed while preserving the integrity of the molecules without metal filaments. This approach provides a facile means to fabricate high-quality molecular junctions consisting of dense monolayers chemically bonded to metal and silicon electrodes.

RESUMEN

In this work, we establish the potential of a UV-promoted direct attachment of alkanes with alcohol and thiol linkers to the silicon (100) surfaces for use in molecular electronic devices with increased potential for integration with existing CMOS technologies. Characterization of the self-assembled monolayers via Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and X-ray photoemission spectroscopy shows that the films assembled on the Si (100) are comparable in quality, aliphatic monolayer coverage, and extent of substrate oxidation to those assembled on the more extensively studied Si (111) crystal face. Simple Si (100)-based electronic devices fabricated with the monolayers exhibited molecule-dependent electrical characteristics. These data highlight the effectiveness of the assembly on Si (100), the ability to fabricate enclosed Si (100)-based molecular devices, and the potential for the future integration of these devices with more conventional technologies.

RESUMEN

Molecular electronics has drawn significant attention for nanoelectronic and sensing applications. A hybrid technology where molecular devices are integrated with traditional semiconductor microelectronics is a particularly promising approach for these applications. Key challenges in this area include developing devices in which the molecular integrity is preserved, developing in situ characterization techniques to probe the molecules within the completed devices, and determining the physical processes that influence carrier transport. In this study, we present the first experimental report of inelastic electron tunneling spectroscopy of integrated metal-molecule-silicon devices with molecules assembled directly to silicon contacts. The results provide direct experimental confirmation that the chemical integrity of the monolayer is preserved and that the molecules play a direct role in electronic conduction through the devices. Spectra obtained under varying measurement conditions show differences related to the silicon electrode, which can provide valuable information about the physics influencing carrier transport in these molecule/Si hybrid devices.

Asunto(s)

RESUMEN

Semiconductor-molecule-metal junctions consisting of alkanethiol monolayers self-assembled on both p(+) and n(-) type highly doped Si(111) wires contacted with a 10 µm Au wire in a crossed-wire geometry are examined. Low temperature transport measurements reveal that molecule-induced semiconductor interface states control charge transport across these systems. Inelastic electron tunneling spectroscopy also highlights the strong contribution of the induced interface states to the observed charge transport.