RESUMEN
Photoluminescence spectra of pure CIGS thin films with different Ga in-depth gradients are systematically investigated. Pure Na-free films are prepared with an innovative hybrid deposition technique, whose optical luminescence emission is analyzed as a function of the depth and is correlated to the radiative intrinsic defects of the material. Finally, the highlighted features are correlated with the performances of test solar cells prepared with the same growths.
RESUMEN
In the thin film solar cells domain, copper indium galium (di)selenide (CIGS) is a material with well-established photovoltaic purpose. Here the presence of a suitable [Ga]/([Ga]+[In]) (GGI) in-depth profile has proved to play a key role in the performance of cells. The implementation of a routine method based on reliable but easily available experimental techniques is mandatory to obtain information on the GGI profile of any CIGS layer, in order to achieve high efficiency chalcogenide layers. In this vein, we here propose and systematically test a simple method for the GGI profile determination based on repeated bromine etching of CIGS thin films followed by Raman analysis of the A1 peak position. The reliability of the proposed approach is verified using a methodical comparison with energy-dispersive X-ray spectroscopy (EDS) analysis and secondary ion mass spectroscopy (SIMS) profiles, showing a good agreement with the GGI in-depth profiles determined using Raman analysis on bromine etched samples.