RESUMEN

Hydrophobic/superhydrophobic materials with intrinsic water repellence are highly desirable in engineering fields including anti-icing in aerocrafts, antidrag and anticorrosion in ships, and antifog and self-cleaning in optical lenses, screen, mirrors, and windows. However, superhydrophobic material should have small surface energy (SE) and a micro/nanosurface structure which can reduce solid-liquid contact significantly. The low SE is generally found in organic materials with inferior mechanical properties that is undesirable in engineering. Intriguingly, previous theoretical calculations have predicted a negative SE for θ-alumina (θ-Al2O3), which inspires us to use it as a superhydrophobic material. Here, we report the experimental evidence of the small/negative SE of θ-Al2O3 and a θ-Al2O3-based superhydrophobic coating prepared by one-step scalable plasma arcing oxidation. The superhydrophobic coating has complete ceramic and desired micro/nanostructure and therefore exhibits excellent aging resistance, wear resistance, corrosion resistance, high-temperature tolerance, and burning resistance. Owing to the rarity of the small/negative SE in inorganic materials, the concept to reduce SE by θ-Al2O3 may foster a blowout to develop robust superhydrophobicity by complete inorganic materials.

RESUMEN

Enhanced glow discharge plasma immersion ion implantation does not require an external plasma source but ion focusing affects the lateral ion fluence uniformity, thereby hampering its use in high-fluence hydrogen ion implantation for thin film transfer and fabrication of silicon-on-insulator. Insertion of a metal ring between the sample stage and glass chamber improves the ion uniformity and reduces the ion fluence non-uniformity as the cathode voltage is raised. Two-dimensional multiple-grid particle-in-cell simulation confirms that the variation of electric field inside the chamber leads to mitigation of the ion focusing phenomenon and the results are corroborated experimentally by hydrogen forward scattering.

RESUMEN

A novel high voltage (HV) modulator that offers a short fall time to minimize sputtering effects and allow more precise control of the incident ion fluence in plasma immersion ion implantation is described. The use of 36 insulated-gate bipolar transistors in the 30 kV hard-tube pulser reduces the HV fall time to 3.5 µs, compared to a fall time of 80 µs if a pull-down resister is used. The voltage balance is achieved by a voltage-balancing resistor, clamped capacitance, and the synchronization of drive signals. Compared to the traditional method employing a pull-down resister or an additional hard tube, our design consumes less power and is more economical and reliable.

RESUMEN

A small pointed hollow anode and large tabular cathode are used in enhanced glow discharge plasma immersion ion implantation (EGD-PIII). Electrons are repelled from the substrate by the electric field formed by the negative voltage pulses and concentrate in the vicinity of the anode to enhance the self-glow discharge process. To extend the application of EGD-PIII to plasma gases with low ionization rates, an insulating tube is used to increase the interaction path for electrons and neutrals in order to enhance the discharge near the anode. Results obtained from numerical simulation based on the particle-in-cell code, finite element method, and experiments show that this configuration enhances the ionization rate and subsequent ion implant fluence. The process is especially suitable for gases that have low ionization rates such as hydrogen and helium.

RESUMEN

A hybrid radio-frequency (rf)/direct-current (dc) system has been developed to control the biasing effects during deposition of diamondlike carbon (DLC) films onto the inner wall of polyethylene terephthalate (PET) bottles. An additional dc bias is coupled to the rf electrode to produce the effect of equivalent rf self-biasing. This allows more flexible control of the deposition of the DLC films which are intended to improve the gas barrier characteristics. The experimental results demonstrate that the additional dc bias improves the adhesion strength between the DLC film and PET, although the enhancement in the gas barrier properties is not significantly larger compared to the one without dc bias. The apparatus and methodology have practical importance in the food and beverage industry.

RESUMEN

A novel power supply system that directly couples pulsed high voltage (HV) pulses and pulsed 13.56 MHz radio frequency (rf) has been developed for plasma processes. In this system, the sample holder is connected to both the rf generator and HV modulator. The coupling circuit in the hybrid system is composed of individual matching units, low pass filters, and voltage clamping units. This ensures the safe operation of the rf system even when the HV is on. The PSPICE software is utilized to optimize the design of circuits. The system can be operated in two modes. The pulsed rf discharge may serve as either the seed plasma source for glow discharge or high-density plasma source for plasma immersion ion implantation (PIII). The pulsed high-voltage glow discharge is induced when a rf pulse with a short duration or a larger time interval between the rf and HV pulses is used. Conventional PIII can also be achieved. Experiments conducted on the new system confirm steady and safe operation.

RESUMEN

Silicon has gradually been recognized to be an essential trace element in the normal metabolism of higher animals, and the role of silicon in the human body has aroused interests in the biomedical community. In fact, the interactions between silicon-based devices and the human body such as biosensors and microelectromechanical systems (MEMS) often suffer from poor biocompatibility. In this work, hydrogen plasma immersion ion implantation (H-PIII) is conducted to improve the bioactivity or bone conductivity of silicon. In order to investigate the formation mechanism of bone-like apatite on the surface of the hydrogen implanted silicon wafer, two comparative experiments, hydrogenation and argon bombardment, are performed. The H-PIII sample exhibits an amorphous surface consisting of Si-H bonds. After immersion in simulated body fluids, a negatively charged surface containing the functional group ([triple bond]Si-O-) is produced and bone-like apatite is observed to nucleate and grow on the surface. The surface of the H-PIII silicon wafer favors the adhesion and growth of osteoblast cells and good cytocompatibility may be inferred.

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RESUMEN

Plasma immersion ion implantation (PIII) was used to modify medical-grade PVC coated by triclosan and bronopol to enhance the antibacterial properties. The surface was first activated by O2 plasma to produce more hydrophilic groups so that triclosan and bronopol could be coated more effectively on the surface. Subsequently, an argon plasma treatment was conducted under optimal conditions to improve the antibacterial properties of the triclosan and bronopol-coated PVC samples. The modified surfaces were characterized by XPS, ATR-FTIR, SEM, and contact angle measurements. The antibacterial properties were evaluated utilizing the method of plate-counting of Staphylococcus aureus (gram positive) and Escherichia coli (gram negative). Our experimental results show that the plasma-modified PVC with bronopol exhibits good antibacterial properties while the favorable bulk properties of PVC are retained. The plasma-modified PVC with triclosan has better antibacterial performance against E. coli than bronopol. The change in the antibacterial effect on the modified PVC with time was also investigated and the antibacterial effect was observed to decrease with time.

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Although some types of TiO(2) powders and gel-derived films can exhibit bioactivity, plasma-sprayed TiO(2) coatings are always bioinert, thereby hampering wider applications in bone implants. We have successfully produced a bioactive nanostructured TiO(2) surface with grain size smaller than 50 nm using nanoparticle plasma spraying followed by hydrogen plasma immersion ion implantation (PIII). The hydrogen PIII nano-TiO(2) coating can induce bone-like apatite formation on its surface after immersion in a simulated body fluid. In contrast, apatite cannot form on either the as-sprayed TiO(2) surfaces (both <50 nm grain size and >50 nm grain size) or hydrogen-implanted TiO(2) with grain size larger than 50 nm. Hence, both a hydrogenated surface that gives rise to negatively charged functional groups on the surface and small grain size (<50 nm) that enhances surface adsorption are crucial to the growth of apatite. Introduction of surface bioactivity to plasma-sprayed TiO(2) coatings, which are generally recognized to have excellent biocompatibility and corrosion resistance as well as high bonding to titanium alloys, makes them more superior than many current biomedical coatings.

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RESUMEN

Hydrogen in silicon has been widely applied in semiconductor fields. In this paper, the application of hydrogen-implanted silicon wafer in biomedical fields was explored by investigating its bioactivity. Hydrogen implanted silicon wafers were prepared using plasma immersion ion implantation. The surface structures of the 1.4 x 10(17) cm(-2) hydrogen-implanted silicon wafers were investigated using atomic force microscopy and transmission electron microscopy (TEM). The hydrogen depth profiles were acquired by SIMS and the crystal quality of the as-implanted silicon was studied by channeling Rutherford backscattering spectrometry (RBS). The bioactivity of the implanted silicon was evaluated using the biomimetic growth of apatite on its surface after it was soaked in simulated body fluid for a period of time. The TEM, SIMS and RBS results indicate the formation of an amorphous hydrogenated silicon (a-Si:Hx) layer has been formed on the surface of the hydrogen-implanted silicon wafer. After immersion in SBF for 14 days, bone-like apatite is observed to nucleate and grow on the surface. With longer soaking time, more apatite appeared on the surface of the hydrogen implanted silicon but our control experiments did not reveal any apatite formation on the surface of the un-implanted silicon wafer, hydrogenated crystalline silicon wafer (with hydrogen, but no amorphous surface), or argon-implanted silicon wafer (amorphous surface but without hydrogen). Our results indicated that the bioactivity of silicon wafer can be improved after hydrogen implantation and the formation of the amorphous hydrogenated silicon (a-Si:Hx) surface also plays a synergistic role to improve the bioactivity.

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