RESUMEN
We report thermoelectric power experiments in e-doped thin films of SrTiO3 (STO) which demonstrate that the electronic band degeneracy can be lifted through defect management during growth. We show that even small amounts of cationic vacancies, combined with epitaxial stress, produce a homogeneous tetragonal distortion of the films, resulting in a Kondo-like resistance upturn at low temperature, large anisotropic magnetoresistance, and nonlinear Hall effect. Ab initio calculations confirm a different occupation of each band depending on the degree of tetragonal distortion. The phenomenology reported in this Letter for tetragonally distorted e-doped STO thin films, is similar to that observed in LaAlO3/STO interfaces and magnetic STO quantum wells.
RESUMEN
The magnetic modulation of the surface plasmon-polariton (SPP) wavevector is experimentally and theoretically studied for the plasmonic modes excited in metal-insulator-metal (MIM) magnetoplasmonic cavities. For this purpose, Ag/SiO2/Ag multilayers with different SiO2 layer thickness in which a thin Co layer is positioned near the top Ag/SiO2 interface, near the bottom SiO2/Ag one, or near both of them, are studied. The magnetoplasmonic MIM cavities present symmetric (SM) and antisymmetric (AM) plasmonic modes, of different wavevector and electromagnetic field profiles inside the MIM cavity. We show that the magnetic SPP wavevector modulation strongly depends on which mode is considered, the cavity thickness, and the number and specific location of Co layers within the structure. With only one ferromagnetic layer, a net modulation is obtained, of higher magnitude as we reduce the SiO2 layer thickness. The introduction of a second Co layer in the structure reduces the modulation due to the non-reciprocal character of SPP modes under an applied magnetic field. Moreover, we demonstrate that the non-reciprocal nature of the SPP modulation can be experimentally visualized in the magnetic hysteresis loops under plasmon excitation conditions by using two Co layers with different magnetization switching fields.