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1.
Comment on "Structures of GaN(0001)bf-(2x2), bf-(4x4), and bf-(5x5) surface reconstructions"
Ramachandran V; Lee CD; Feenstra RM; Smith AR; Greve DW.
Phys Rev Lett ; 84(17): 4014, 2000 Apr 24.
Artículo en Inglés | MEDLINE | ID: mdl-11019263
2.
Spontaneous formation of indium-rich nanostructures on InGaN(0001) surfaces
Chen H; Feenstra RM; Northrup JE; Zywietz T; Neugebauer J.
Phys Rev Lett ; 85(9): 1902-5, 2000 Aug 28.
Artículo en Inglés | MEDLINE | ID: mdl-10970643

RESUMEN

InGaN(0001) surfaces prepared by molecular beam epitaxy have been studied using scanning tunneling microscopy and first-principles total energy calculations. Nanometer-size surface structures are observed consisting of either vacancy islands or ordered vacancy rows. The spontaneous formation of these structures is shown to be driven by significant strain in the surface layers and by the relative weakness of the In-N bond compared to Ga-N. Theory indicates that In will preferentially bind at the edges and interior of the structures, thereby giving rise to an inhomogeneous In distribution at the surface.

3.
Local transport properties of thin bismuth films studied by scanning tunneling potentiometry.
Briner BG; Feenstra RM; Chin TP; Woodall JM.
Phys Rev B Condens Matter ; 54(8): R5283-R5286, 1996 Aug 15.
Artículo en Inglés | MEDLINE | ID: mdl-9986589
4.
Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors.
Feenstra RM.
Phys Rev B Condens Matter ; 50(7): 4561-4570, 1994 Aug 15.
Artículo en Inglés | MEDLINE | ID: mdl-9976760
5.
Interface roughness and asymmetry in InAs/GaSb superlattices studied by scanning tunneling microscopy.
Feenstra RM; Collins DA; Ting DZ; Wang MW; McGill TC.
Phys Rev Lett ; 72(17): 2749-2752, 1994 Apr 25.
Artículo en Inglés | MEDLINE | ID: mdl-10055967
6.
Pinned and unpinned step dynamics on vicinal silver (110) surfaces.
Held GA; Goodstein DM; Feenstra RM; Ramstad MJ; Noh DY; Birgeneau RJ.
Phys Rev B Condens Matter ; 48(11): 8458-8461, 1993 Sep 15.
Artículo en Inglés | MEDLINE | ID: mdl-10007048
7.
Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs.
Feenstra RM; Woodall JM; Pettit GD.
Phys Rev Lett ; 71(8): 1176-1179, 1993 Aug 23.
Artículo en Inglés | MEDLINE | ID: mdl-10055469
8.
Different Fermi-level pinning behavior on n- and p-type GaAs(001).
Pashley MD; Haberern KW; Feenstra RM; Kirchner PD.
Phys Rev B Condens Matter ; 48(7): 4612-4615, 1993 Aug 15.
Artículo en Inglés | MEDLINE | ID: mdl-10008943
9.
Band gap of the Ge(111)2 x 1 and Si(111)2 x 1 surfaces by scanning tunneling spectroscopy.
Feenstra RM.
Phys Rev B Condens Matter ; 44(24): 13791-13794, 1991 Dec 15.
Artículo en Inglés | MEDLINE | ID: mdl-9999592
10.
Surface diffusion and phase transition on the Ge(111) surface studied by scanning tunneling microscopy.
Feenstra RM; Slavin AJ; Held GA; Lutz MA.
Phys Rev Lett ; 66(25): 3257-3260, 1991 Jun 24.
Artículo en Inglés | MEDLINE | ID: mdl-10043741
11.
Scanning tunneling microscopy and spectroscopy of Bi-Sr-Ca-Cu-O 2:2:1:2 high-temperature superconductors.
Shih CK; Feenstra RM; Chandrashekhar GV.
Phys Rev B Condens Matter ; 43(10): 7913-7922, 1991 Apr 01.
Artículo en Inglés | MEDLINE | ID: mdl-9996413
12.
Formation of the 5 x 5 reconstruction on cleaved Si(111) surfaces studied by scanning tunneling microscopy.
Feenstra RM; Lutz MA.
Phys Rev B Condens Matter ; 42(8): 5391-5394, 1990 Sep 15.
Artículo en Inglés | MEDLINE | ID: mdl-9996119
13.
Scanning tunneling microscopy and first-principles theory of the Sn/GaAs(110) surface.
Shih CK; Kaxiras E; Feenstra RM; Pandey KC.
Phys Rev B Condens Matter ; 40(14): 10044-10047, 1989 Nov 15.
Artículo en Inglés | MEDLINE | ID: mdl-9991549
14.
Electronic states of metal atoms on the GaAs(110) surface studied by scanning tunneling microscopy.
Feenstra RM.
Phys Rev Lett ; 63(13): 1412-1415, 1989 Sep 25.
Artículo en Inglés | MEDLINE | ID: mdl-10040561
15.
Surface structural and electronic properties of cleaved single crystals of Bi2.15Sr1.7CaCu2O8+ delta compounds: A scanning tunneling microscopy study.
Shih CK; Feenstra RM; Kirtley JR; Chandrashekhar GV.
Phys Rev B Condens Matter ; 40(4): 2682-2685, 1989 Aug 01.
Artículo en Inglés | MEDLINE | ID: mdl-9992186
16.
Electronic and structural properties of a discommensurate monolayer system: GaAs(110)-(1 x 1)Bi.
McLean AB; Feenstra RM; Taleb-Ibrahimi A; Ludeke R.
Phys Rev B Condens Matter ; 39(17): 12925-12928, 1989 Jun 15.
Artículo en Inglés | MEDLINE | ID: mdl-9948173
17.
Geometric and electronic structure of antimony on the GaAs(110) surface studied by scanning tunneling microscopy.
Mårtensson P; Feenstra RM.
Phys Rev B Condens Matter ; 39(11): 7744-7753, 1989 Apr 15.
Artículo en Inglés | MEDLINE | ID: mdl-9947455
18.
Fermi-level pinning at the Sb/GaAs(110) surface studied by scanning tunneling spectroscopy.
Feenstra RM; Mårtensson P.
Phys Rev Lett ; 61(4): 447-450, 1988 Jul 25.
Artículo en Inglés | MEDLINE | ID: mdl-10039335
19.
Structure of oxygen adsorbed on the GaAs(110) surface studied using scanning-tunneling microscopy.
Stroscio JA; Feenstra RM; Fein AP.
Phys Rev B Condens Matter ; 36(14): 7718-7721, 1987 Nov 15.
Artículo en Inglés | MEDLINE | ID: mdl-9942563
20.
Reconstruction of steps on the Si(111)2 x 1 surface.
Feenstra RM; Stroscio JA.
Phys Rev Lett ; 59(19): 2173-2176, 1987 Nov 09.
Artículo en Inglés | MEDLINE | ID: mdl-10035443
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