RESUMEN

OBJECTIVE: To develop and validate a Russian version of The Central Sensitization Inventory (CSI-R). MATERIAL AND METHODS: The study included 3 stages: 1) direct and reverse translation, linguistic validation of the questionnaire; 2) assessment of internal consistency, reliability and sensitivity (n=50); 3) psychometric validation in the samples of patients with fibromyalgia syndrome (n=40), chronic widespread pain (n=40), regional chronic low back pain without other specific pain complaints (n=40), and in the control sample of informants with no pain complaints (n=40). RESULTS AND CONCLUSION: The Russian version of CSI-R is valid, reliable and can be used in clinical practice as a diagnostic tool for revealing central sensitization. The study of the sensitivity of the questionnaire in patients during drug therapy proved its effectiveness in assessing the dynamics of the disease and the effect of therapy.

Asunto(s)

Sensibilización del Sistema Nervioso Central , Dolor Crónico , Humanos , Psicometría , Reproducibilidad de los Resultados , Federación de Rusia , Encuestas y Cuestionarios

RESUMEN

Novel superconducting superlattices with transition temperature in the range 2.5-6.4 K consisting only of semiconducting materials are discovered. Among them there are multilayers, including a wide-gap semiconductor as one of the components. It is shown that superconductivity is connected with the interfaces between two semiconductors containing regular grids of the misfit dislocations. The possibility of the dislocation-induced superconductivity is discussed.

RESUMEN

Sc-Si multilayers are suggested as high-reflectivity coatings for a VUV interval of 35-50 nm. Fabricated mirrors show normal-incidence reflectivity of 30-54%, which is high enough for effective manipulation of the beams of compact-discharge, laser-driven x-ray lasers. The values obtained are not, however, limits for Sc-Si coatings. Theoretical estimations as well as electron microscopy studies of Sc-Si interfaces indicate a large potential for a further increase in their reflectivity.

RESUMEN

Structural, phase, and chemical stabilities of x-ray multilayer mirrors Mo-(B + C) with periods in the range 8-11.5 nm were studied at temperatures of 250-1100°C by small-angle and large-angle x-ray diffraction and electron microscopy methods. Two amorphizations at ~450 and ~750°C and two crystallizations at ~650 and ~850°C of Mo-based layers were observed, which were due to the formation of the molybdenum carbides MoC (hex), γ-MoC, and Mo2C instead of the metal Mo, and to the formation of the molybdenum borides MoB2 and Mo2B5 instead of molybdenum carbides, respectively. Both amorphizations of Mo-based layers were accompanied by smoothing of interfaces and by an increase of the multilayer x-ray reflectivity at λ = 0.154 nm. Both crystallizations of Mo-based layers promoted the development of interface roughness and a decrease of multilayer x-ray reflectivity. The destruction of Mo-(B + C) multilayers at ~ 1100°C was caused by the recrystallization of Mo2B5 layers.

RESUMEN

Annealing effects in the short-period multilayers Cr3C2/C, TiC/C, Cr3C2/(B + C), and CrB2/C were studied in a wide temperature range ~200-1200°C by x-ray scattering and cross-sectional electron microscopy. It was shown that the thermodynamic equilibrium of the layer materials at their interfaces and stabilization of layer structure by impurities and heat treatment are effective approaches to short-period multilayers with enhanced thermal stability of their structure and optical properties.

RESUMEN

The thermal stability of Mo-Si multilayers prepared by magnetron sputtering is studied. It is found that degradation of x-ray reflectivity of Mo-Si multilayers under heat loading is connected with the roughening of Mo-Si interfaces and the formation of compounds Mo(x)Si(y),. To avoid these degradation mechanisms we fabricated and tested MoSi(2)-Si multilayers under heat loading. The MoSi(2)-Si multilayer appeared to be much more stable both in period and x-ray reflectivity because of thermodynamic equilibrium of the components MoSi(2) and Si at the interface. The working temperature of MoSi(2)-Si multilayers reaches 1000 K.