RESUMEN
The piezoelectronic transistor (PET) has been proposed as a transduction device not subject to the voltage limits of field-effect transistors. The PET transduces voltage to stress, activating a facile insulator-metal transition, thereby achieving multigigahertz switching speeds, as predicted by modeling, at lower power than the comparable generation field effect transistor (FET). Here, the fabrication and measurement of the first physical PET devices are reported, showing both on/off switching and cycling. The results demonstrate the realization of a stress-based transduction principle, representing the early steps on a developmental pathway to PET technology with potential to contribute to the IT industry.
RESUMEN
We show that smooth domain walls in ultrathin ferromagnetic films can develop jaggedness even in the absence of random defects when confronted with a sufficiently large tilt between the uniaxial anisotropy direction and the external field. From the Kerr imaging of 0.7 nm thin Co films and from numerical simulations we report a previously unseen runaway fingerlike instability in a magnetic wall that begins on nanoscales but grows to macroscopic lengths for sufficiently large tilt angles. A threshold for the instability is controlled by the ferromagnet's parameters and the applied field.