RESUMEN
Fabry-Perot laser diodes based on (Al, Ga)As and Ga(As, Bi) with single or multiple parabolic or rectangular-shaped quantum wells (QWs) emitting at the 780-1100 nm spectral range were fabricated and investigated for optimization of the laser QW design and composition of QWs. The laser structures were grown using the molecular beam epitaxy (MBE) technique on the n-type GaAs(100) substrate. The photolithography process was performed to fabricate edge-emitting laser bars of 5 µm by 500 µm in size. The temperature-dependent power-current measurements showed that the characteristic threshold current of the fabricated LDs was in the 60-120 mA range. Light and current characteristics were almost linear up to (1.2-2.0) Ith. Low-frequency 10 Hz-20 kHz electrical and optical noise characteristics were measured in the temperature range from 70 K to 290 K and showed that the low-frequency optical and electrical noise spectra are comprised of 1/f and Lorentzian-type components. The positive cross-correlation between optical and electrical fluctuations was observed.
RESUMEN
The dilute bismide alloy GaAs1-xBix has drawn significant attention from researchers interested in its fundamental properties and the potential for infrared optoelectronics applications. To extend the study of bismides, molecular-beam heteroepitaxy of nominally 1.0 eV bandgap bismide on Ge substrates is comprehensively investigated. Analysis of atomic-resolution anti-phase domain (APD) images in the direct-epitaxy revealed a high-density of Ga vacancies and a reduced Bi content at their boundaries. This likely played a key role in the preferential dissolution of Bi atoms from the APD interiors and Bi spiking in Ge during thermal annealing. Introduction of GaAs buffer on offcut Ge largely suppressed the formation of APDs, producing high-quality bismide with single-variant CuPtB-type ordered domains as large as 200 nm. Atomic-resolution X-ray imaging showed that 2-dimensional Bi-rich (111) planes contain up to x = 9% Bi. The anomalously early onset of localization found in the temperature-dependent photoluminescence suggests enhanced interactions among Bi states, as compared to non-ordered samples. Growth of large-domain single-variant ordered GaAs1-xBix films provides new prospects for detailed analysis of the structural modulation effects and may allow to further tailor properties of this alloy for optoelectronic applications.