RESUMEN
Improving the energy alignment between charge-transport layers and the perovskite is crucial for further enhancing the photovoltaic performance of tin-based perovskite solar cells (PSCs). Herein, the role of Ti3C2T x MXene in a poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) hole transport layer (HTL) on the photovoltaic properties of PSCs is investigated as a function of its concentration. An improved perovskite film formation with reduced pinhole density and a more uniform contact potential difference is noted when MXene is embedded in the PEDOT:PSS HTL. The work function of the HTL is increased according to photoelectronic measurements, leading to a favorable energy alignment with the HOMO of PEA0.2FA0.8SnI3 perovskite. PSCs fabricated using a MXene-embedded PEDOT:PSS HTL delivered a power conversion efficiency (PCE) of 8.35% compared to 7.35% from the pristine counterpart, while retaining â¼90% of its initial PCE after 450 h of storage in a N2 atmosphere.
RESUMEN
The synergistic effect of high-quality NiOxhole transport layers (HTLs) deposited by ion beam sputtering on ITO substrates and the Ti3C2TxMXene doping of CH3NH3PbI3(MAPI) perovskite layers is investigated in order to improve the power conversion efficiency (PCE) of p-i-n perovskite solar cells (PSCs). The 18 nm thick NiOxlayers are pinhole-free and exhibit large-scale homogeneous surface morphology as revealed by the atomic force microscopy (AFM). The grazing-incidence x-ray diffraction showed a 0.75% expansion of the face-centered cubic lattice, suggesting an excess of oxygen as is typical for non-stoichiometric NiOx. The HTLs were used to fabricate the PSCs with MXene-doped MAPI layers. A PSC with undoped MAPI layer served as a control. The size of MAPI polycrystalline grains increased from 430 ± 80 nm to 620 ± 190 nm on the doping, as revealed by AFM. The 0.15 wt% MXene doping showed a 14.3% enhancement in PCE as compared to the PSC with undoped MAPI. The energy-resolved electrochemical impedance spectroscopy revealed one order of magnitude higher density of defect states in the band gap of MXene-doped MAPI layer, which eliminated beneficial effect of reduced total area of larger MAPI grain boundaries, decreasing short-circuit current. The PCE improvement is attributed to a decrease of the work function from -5.26 eV to -5.32 eV on the MXene doping, which increased open-circuit voltage and fill factor.