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BACKGROUND: Colorectal neuroendocrine carcinoma is a relatively rare tumor, for which a prognosis prediction model is lacking. Based on the data from Surveillance, Epidemiology, and End Results (SEER) database and Fujian Cancer Hospital, the study constructed and validated a prognostic nomogram to assess overall survival of patients with colorectal neuroendocrine carcinoma(CRNEC). METHODS: We extracted data of patients diagnosed with CRNEC from the SEER database. These patients were randomly divided into a training cohort(N = 1425) and an internal validation cohort(N = 612). Data of patients diagnosed with CRNEC in Fujian Cancer Hospital was collected as an external validation cohort(N = 54). A prognostic nomogram was established. The performance of the nomogram was assessed with ROC curve, C-index and calibration curve. Decision curve analysis(DCA) and ROC curve were used to compare the prediction efficacy of nomogram with the seventh edition of the TNM classification of the American Joint Commission of Cancer. RESULTS: Nine variables were identified as independent predictors. Nomogram were established by the nine variables. AUC of the nomogram in predicting 1-, 3- and 5-year OS were 0.900, 0.912 and 0.915 in training cohort, 0.900, 0.925 and 0.919 in internal validation cohort, 0.900, 0.903 and 0.928 in external validation cohort. C-index were 0.845, 0.854 and 0.837. Calibration curves overlapped well with reference lines. Compared with the AJCC TNM staging system, the nomogram performed more effectively. Patients classified into low-risk and high-risk groups by the nomogram scores and performed well in stratification. CONCLUSION: The prognostic nomogram established and validated in our study can accurately and effectively predict the prognosis of patients with CRNEC.

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We report a new, to the best of our knowledge, type of SI-GaAs photoconductive semiconductor switch (PCSS) with nanostructures. Since light can enter from both the top and side surfaces of nanostructures, the effective penetration depth is significantly increased. Lower on-state resistance and a longer lock-on time have been achieved in the nonlinear mode with this design, as well as a lower triggering fluence in the linear mode. This could be highly useful for a variety of applications that require lower on-state resistance and/or longer lock-on time such as pulsed power systems and firing set switches.

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In this Letter, we reported anomalous electro-optic potassium tantalate niobate (KTN) devices, in which both electrons and holes were injected into the KTN crystal via ultraviolet (UV) illumination-assisted charge injection. This could not only significantly enhance the performance of electro-optic devices (e.g., a 270% increase in the deflection angle in terms of the KTN deflector) but also enable the new bi-directional scanning capability. The results in this work would be very useful for a variety of devices and applications, such as electro-optic based vari-focal lenses.

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Spatially analyzing non-uniform distributions of electric phenomena such as electric field and permittivity in ferroelectric devices is very challenging. In this study, we apply an optical beam deflection method to map the non-uniform electric phenomena in relaxor ferroelectric potassium tantalate niobate (KTN) crystals. To adequately correlate the physical parameters and their spatial distributions in KTN crystals, a general model that describes the giant electro-optic response and associated beam deflection is derived. The proposed model is in good agreement with the experimental results and is envisioned to be useful for analyzing electric field-induced phenomena in non-linear dielectric materials and devices.

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Most applications of a ferroelectric-based electro-optic (EO) beam deflector have been limited by the high applied voltage. In this Letter, we report a dramatically increased EO beam deflection in relaxor ferroelectric potassium tantalate niobate (KTN) crystals by using the electric-field-enhanced permittivity. Due to the existence of the electric-field-induced phase transition in relaxor ferroelectric materials, the dielectric permittivity can be substantially increased by the applied electric field at a certain temperature. Both the theoretical study and the experimental verifications on the enhanced beam deflection and EO effect in the case with the electric-field-induced high permittivity were conducted. The experimental results confirmed that there was a three-fold increase in the deflection angle, which represented a dramatic increase in the deflection angle. By offering a wider deflection range and a lower driving voltage, such a largely enhanced beam deflection is of great benefit to the KTN deflector.

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This publisher's note contains corrections to Opt. Lett.44, 5557 (2019)OPLEDP0146-959210.1364/OL.44.005557.

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We report a new type of photoconductive semiconductor switch (PCSS), consisting of a semi-insulating gallium arsenic (GaAs) substrate and a front-bonded ruby crystal. The 532 nm laser pulses from an Nd-YAG laser incident on the front surface of the ruby crystal. A portion of the laser pulse passes through the crystal and reaches the GaAs substrate, and the remaining portion of the laser pulse is absorbed by the ruby crystal. This results in the emission of 694 nm fluorescent light. Furthermore, a portion of emitted fluorescent light also reaches the GaAs substrate. The high-fluence 532 nm short laser pulse with a pulse width around several nanoseconds is used to trigger the PCSS entering the high-gain nonlinear mode, whereas the low-fluence long-lifetime (on the order of a millisecond) 694 nm fluorescent light is used to maintain the lock-on time. Thus, an ultralong lock-on time on the order of millisecond is achieved, which is 3 orders of magnitude longer than a typical lock-on time of high-gain GaAs PCSS.

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In this paper, a high-speed non-mechanical two-dimensional KTN beam deflector is reported. The scanning mechanism is based on the combination of space charge controlled beam deflection and temperature gradient enabled beam deflection in a nanodisordered KTN crystal. Both theoretical analyses and experimental investigations are provided, which agree relatively well with each other. This work provides an effective way for realizing multi-dimensional high-speed non-mechanical beam deflection, which can be very useful for a variety of applications, including high-speed 3D laser printing, high resolution high speed scanning imaging, and free space reconfigurable laser communications.

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In this paper, we report a three orders-of-magnitude increase in the speed of a space-charge-controlled KTN beam deflector achieved by eliminating the electric field-induced phase transition (EFIPT) in a nanodisordered KTN crystal. Previously, to maximize the electro-optic effect, a KTN beam deflector was operated at a temperature slightly above the Curie temperature. The electric field could cause the KTN to undergo a phase transition from the paraelectric phase to the ferroelectric phase at this temperature, which causes the deflector to operate in the linear electro-optic regime. Since the deflection angle of the deflector is proportional to the space charge distribution but not the magnitude of the applied electric field, the scanning speed of the beam deflector is limited by the electron mobility within the KTN crystal. To overcome this speed limitation caused by the EFIPT, we propose to operate the deflector at a temperature above the critical end point. This results in a significant increase in the scanning speed from the microsecond to nanosecond regime, which represents a major technological advance in the field of fast speed beam scanners. This can be highly beneficial for many applications including high-speed imaging, broadband optical communications, and ultrafast laser display and printing.

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Quantitative mapping of layer number and stacking order for CVD-grown graphene layers is realized by formulating Raman fingerprints obtained on two stepwise stacked graphene single-crystal domains with AB Bernal and turbostratic stacking (with ~30°interlayer rotation), respectively. The integrated peak area ratio of the G band to the Si band, A(G)/A(Si), is proven to be a good fingerprint for layer number determination, while the area ratio of the 2D and G bands, A(2D)/A(G), is shown to differentiate effectively between the two different stacking orders. The two fingerprints are well formulated and resolve, quantitatively, the layer number and stacking type of various graphene domains that used to rely on tedious transmission electron microscopy for structural analysis. The approach is also noticeable in easy discrimination of the turbostratic graphene region (~30° rotation), the structure of which resembles the well known high-mobility graphene R30/R2(±) fault pairs found on the vacuum-annealed C-face SiC and suggests an electron mobility reaching 14,700 cm(3) V(-1) s(-1). The methodology may shed light on monitoring and control of high-quality graphene growth, and thereby facilitate future mass production of potential high-speed graphene applications.

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This study investigated the effects of eight light sources on photosynthetic bacteria (Rhodopseudomonas palustris) growth and carotenoid content (CD), cultured for 144 h. Light sources were incandescent lamp (IL), halogen lamp (HL), fluorescence lamp (FL), and light-emitting diodes (LEDs) of white (LW), yellow (LY), red (LR), blue (LB), and green (LG). Dark condition served as the control. Under around 2000 lux, light sources ranked greatest to least bacterial growth effect were (LB=IL) > FL > LW ≥ HL ≥ LR ≥ (LG=LY=DK). Ranking effect on CD content was LB > IL ≥ LY ≥ (HL=LR=LG) ≥ LW ≥ DK ≥ FL. Energy efficiency for bacterial growth was LB > LW > LY > IL > LG > HL > FL > LR. CD productivity ranking was LB > LY > LW > LG > IL > HL > LR > FL. Results revealed that LB saved 75% energy and increased CD productivity by 348% compared with IL.

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