RESUMEN
Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride-on-silicon platform with gallium nitride (GaN) as the main waveguide layer. The photonic circuits consist of a microdisk and a pulley waveguide, terminated by out-coupling gratings. In this Letter, we measure quality factors up to 3500 under continuous-wave excitation. Lasing is observed from 374 to 399 nm under pulsed excitation, achieving low-threshold energies of 0.14mJ/cm2 per pulse (threshold peak powers of 35kW/cm2). A large peak-to-background dynamic of around 200 is observed at the out-coupling grating for small gaps of 50 nm between the disk and the waveguide. These devices operate at the limit of what can be achieved with GaN in terms of operation wavelength.
RESUMEN
On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in the blue spectral range based on microdisks and bus waveguides in III-nitride on silicon. We report on the interplay between microdisk-waveguide coupling and its optical properties. We observe critical coupling and phase matching, i.e. the most efficient energy transfer scheme, for very short gap sizes and thin waveguides (g = 45 nm and w = 170 nm) in the spontaneous emission regime. Whispering gallery mode lasing is demonstrated for a wide range of parameters with a strong dependence of the threshold on the loaded quality factor. We show the dependence and high sensitivity of the output signal on the coupling. Lastly, we observe the impact of processing on the tuning of mode resonances due to the very short coupling distances. Such small footprint on-chip integrated microlasers providing maximum energy transfer into a photonic circuit have important potential applications for visible-light communication and lab-on-chip bio-sensors.
RESUMEN
Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of dipolar excitons. We demonstrate the in-plane confinement and cooling of these excitons, when trapped in the electrostatic potential created by semitransparent electrodes of various shapes deposited on the sample surface. This result is a prerequisite for the electrical control of the exciton densities and fluxes, as well for studies of the complex phase diagram of these dipolar bosons at low temperature.
RESUMEN
We investigated the structural and optical properties of Eu-doped ZnO thin films made by sol-gel technique and magnetron reactive sputtering on Si (100) substrate. The films elaborated by sol-gel process are polycrystalline while the films made by sputtering show a strongly textured growth along the c-axis. X-ray diffraction patterns and transmission electron microscopy analysis show that all samples are free of spurious phases. The presence of Eu(2+) and Eu(3+) into the ZnO matrix has been confirmed by x-ray photoemission spectroscopy. This means that a small fraction of Europium substitutes Zn(2+) as Eu(2+) into the ZnO matrix; the rest of Eu being in the trivalent state. This is probably due to the formation of Eu(2)O(3) oxide at the surface of ZnO particles. This is at the origin of the strong photoluminescence band observed at 2 eV, which is characteristic of the (5)D(0)-->(7)F(2) Eu(3+) transition. In addition the photoluminescence excitonic spectra showed efficient energy transfer from the ZnO matrix to the Eu(3+) ion, which is qualitatively similar for both films although the sputtered films have a better structural quality compared to the sol-gel process grown films.