RESUMEN
Two-dimensional (2D) van der Waals heterostructures combine the distinct properties of individual 2D materials, resulting in metamaterials, ideal for emergent electronic, optoelectronic, and spintronic phenomena. A significant challenge in harnessing these properties for future hybrid circuits is their large-scale realization and integration into graphene interconnects. In this work, we demonstrate the direct growth of molybdenum disulfide (MoS2) crystals on patterned graphene channels. By enhancing control over vapor transport through a confined space chemical vapor deposition growth technique, we achieve the preferential deposition of monolayer MoS2 crystals on monolayer graphene. Atomic resolution scanning transmission electron microscopy reveals the high structural integrity of the heterostructures. Through in-depth spectroscopic characterization, we unveil charge transfer in Graphene/MoS2, with MoS2 introducing p-type doping to graphene, as confirmed by our electrical measurements. Photoconductivity characterization shows that photoactive regions can be locally created in graphene channels covered by MoS2 layers. Time-resolved ultrafast transient absorption (TA) spectroscopy reveals accelerated charge decay kinetics in Graphene/MoS2 heterostructures compared to standalone MoS2 and upconversion for below band gap excitation conditions. Our proof-of-concept results pave the way for the direct growth of van der Waals heterostructure circuits with significant implications for ultrafast photoactive nanoelectronics and optospintronic applications.
RESUMEN
Two-dimensional-zero-dimensional plasmonic hybrids involving defective graphene and transition metals (DGR-TM) have drawn significant interest due to their near-field plasmonic effects in the wide range of the UV-vis-NIR spectrum. In the present work, we carried out extensive investigations on resonance Raman spectroscopy (RRS) and localized surface plasmon resonance (LSPR) from the various DGR-TM hybrids (Au, Ag, and Cu) using micro-Raman, spatial Raman mapping analysis, high-resolution transmission electron microscopy (HRTEM), and LSPR absorption measurements on defective CVD graphene layers. Further, electric field (E) mappings of samples were calculated using the finite domain time difference (FDTD) method to support the experimental findings. The spatial distribution of various in-plane and edge defects and defect-mediated interaction of plasmonic nanoparticles (NPs) with graphene were investigated on the basis of the RRS and LSPR and correlated with the quantitative analysis from HRTEM, excitation wavelength-dependent micro-Raman, and E-field enhancement features of defective graphene and defective graphene-Au hybrids before and after rapid thermal annealing (RTA). Excitation wavelength-dependent surface-enhanced Raman scattering (SERS) and LSPR-induced broadband absorption from DGR-Au plasmonic hybrids reveal the electron and phonon interaction on the graphene surface, which leads to the charge transfer from TM NPs to graphene. This is believed to be responsible for the reduction in the SERS signal, which was observed from the wavelength-dependent Raman spectroscopy/mappings. We implemented defective graphene and DGR-Au plasmonic hybrids as efficient SERS sensors to detect the Fluorescein and Rhodamine 6G molecules with a detection limit down to 10-9 M. Defective graphene and Au plasmonic hybrids showed an impressive Raman enhancement in the order of 108, which is significant for its practical application.
RESUMEN
A reliable method to prepare a surface-enhanced Raman scattering (SERS) active substrate is developed herein, by electrodeposition of gold nanoparticles (Au NPs) on defect-engineered, large area chemical vapour deposition graphene (GR). A plasma treatment strategy is used in order to engineer the structural defects on the basal plane of large area single-layer graphene. This defect-engineered Au functionalized GR, offers reproducible SERS signals over the large area GR surface. The Raman data, along with X-ray photoelectron spectroscopy and analysis of the water contact angle are used to rationalize the functionalization of the graphene layer. It is found that Au NPs functionalization of the "defect-engineered" graphene substrates permits detection of concentrations as low as 10-16 m for the probe molecule Rhodamine B, which offers an outstanding molecular sensing ability. Interestingly, a Raman signal enhancement of up to ≈108 is achieved. Moreover, it is observed that GR effectively quenches the fluorescence background from the Au NPs and molecules due to the strong resonance energy transfer between Au NPs and GR. The results presented offer significant direction for the design and fabrication of ultra-sensitive SERS platforms, and also open up possibilities for novel applications of defect engineered graphene in biosensors, catalysis, and optoelectronic devices.
RESUMEN
New layered solids by the combinatorial stacking of different atomic layers are emanating as novel candidates for energy efficient devices. Here, sequentially stacked single layer graphene-molybdenum disulfide (MoS2) van der Waals (vdW) solids are demonstrated for their efficacy in the catalysis of hydrogen evolution reaction (HER), and importance of their stacking order in tuning the photo-electrocatalytic (PEC) efficiency is unraveled. Single layer graphene and a few layered MoS2 stacked vdW solids based transparent flexible electrodes were prepared, and a particular stacking sequence where top-graphene: bottom-MoS2/polydimethylsiloxane (PDMS) geometry (MSGR) exhibited the lowest onset and over potentials and a very high exchange current density (j 0 â¼ 245 ± 1 µA cm-2) in acidic HER in comparison to the individual layers and other stacked configuration (MoS2 on top of graphene on PDMS, GRMS). The HER studies under dark and white light illuminations were conducted to explore the PEC responses of the devices. The augmented HER performance of MSGR is further confirmed from the charge transfer resistance measurements using electrochemical impedance spectroscopy. Role of graphene plasmonics and MoS2 to graphene electron transfer were studied, and this study unravels the importance of a new factor, stacking order of vdW layers, while designing novel devices from the layered solids.
RESUMEN
We demonstrate the graphene assisted catalyst free growth of ZnO nanowires (NWs) on chemical vapor deposited (CVD) and chemically processed graphene buffer layers at a relatively low growth temperature (580 °C) in the presence and absence of ZnO seed layers. In the case of CVD graphene covered with rapid thermal annealed ZnO buffer layer, the growth of vertically aligned ZnO NWs takes place, while the direct growth on CVD graphene, chemically derived graphene (graphene oxide and graphene quantum dots) without ZnO seed layer resulted in randomly oriented sparse ZnO NWs. Growth mechanism was studied from high resolution transmission electron microscopy and Raman spectroscopy of the hybrid structure. Further, we demonstrate strong UV, visible photoluminescence (PL) and enhanced photoconductivity (PC) from the CVD graphene-ZnO NWs hybrids as compared to the ZnO NWs grown without the graphene buffer layer. The evolution of crystalinity in ZnO NWs grown with ZnO seed layer and graphene buffer layer is correlated with the Gaussian line shape of UV and visible PL. This is further supported by the strong Raman mode at 438 cm(-1) significant for the wurtzite phase of the ZnO NWs grown on different graphene substrates. The effect of the thickness of ZnO seed layers and the role of graphene buffer layers on the aligned growth of ZnO NWs and its enhanced PC are investigated systematically. Our results demonstrate the catalyst free growth and superior performance of graphene-ZnO NW hybrid UV photodetectors as compared to the bare ZnO NW based photodetectors.
RESUMEN
We demonstrate graphene-assisted controlled fabrication of various ZnO 1D nanostructures on the SiO2/graphene substrate at a low temperature (540 °C) and elucidate the growth mechanism. Monolayer and a few layer graphene prepared by chemical vapor deposition (CVD) and subsequently coated with a thin Au layer followed by rapid thermal annealing is shown to result in highly aligned wurtzite ZnO nanorods (NRs) with clear hexagonal facets. On the other hand, direct growth on CVD graphene without a Au catalyst layer resulted in a randomly oriented growth of dense ZnO nanoribbons (NRBs). The role of in-plane defects and preferential clustering of Au atoms on the defect sites of graphene on the growth of highly aligned ZnO NRs/nanowires (NWs) on graphene was established from micro-Raman and high-resolution transmission electron microscopy analyses. Further, we demonstrate strong UV and visible photoluminescence (PL) from the as-grown and post-growth annealed ZnO NRs, NWs, and NRBs, and the origin of the PL emission is correlated well with the X-ray photoelectron spectroscopy analysis. Our results hint toward an epitaxial growth of aligned ZnO NRs on graphene by a vapor-liquid-solid mechanism and establish the importance of defect engineering in graphene for controlled fabrication of graphene-semiconductor NW hybrids with improved optoelectronic functionalities.