RESUMEN
Understanding the atomic-scale mechanisms that govern the structure of interfaces is critical across materials systems but particularly so for two-dimensional (2D) moiré materials. Here, we image, atom-by-atom, the thermally induced structural evolution of twisted bilayer transition metal dichalcogenides using in situ transmission electron microscopy. We observe low-temperature, local conversion of moiré superlattice into nanoscale aligned domains. Unexpectedly, this process occurs by nucleating a new grain within one monolayer, whose crystal orientation is templated by the other. The aligned domains grow through collective rotation of moiré supercells and hopping of 5|7 defect pairs at moiré boundaries. This provides mechanistic insight into the atomic-scale interactions controlling moiré structures and illustrates the potential to pattern interfacial structure and properties of 2D materials at the nanoscale.
RESUMEN
Twist angle between two-dimensional layers is a critical parameter that determines their interfacial properties, such as moiré excitons and interfacial ferro-electricity. To achieve better control over these properties for fundamental studies and various applications, considerable efforts have been made to manipulate twist angle. However, due to mechanical limitations and the inevitable formation of incommensurate regions, there remains a challenge in attaining perfect alignment of crystalline orientation. Here we report a thermally induced atomic reconstruction of randomly stacked transition metal dichalcogenide multilayers into fully commensurate heterostructures with zero twist angle by encapsulation annealing, regardless of twist angles of as-stacked samples and lattice mismatches. We also demonstrate the selective formation of R- and H-type fully commensurate phases with a seamless lateral junction using chemical vapour-deposited transition metal dichalcogenides. The resulting fully commensurate phases exhibit strong photoluminescence enhancement of the interlayer excitons, even at room temperature, due to their commensurate structure with aligned momentum coordinates. Our work not only demonstrates a way to fabricate zero-twisted, two-dimensional bilayers with R- and H-type configurations, but also provides a platform for studying their unexplored properties.
RESUMEN
van der Waals (vdW) epitaxy can be used to grow epilayers with different symmetries on graphene, thereby imparting unprecedented properties in graphene owing to formation of anisotropic superlattices and strong interlayer interactions. Here, we report in-plane anisotropy in graphene by vdW epitaxially grown molybdenum trioxide layers with an elongated superlattice. The grown molybdenum trioxide layers led to high p-doping of the underlying graphene up to p = 1.94 × 1013 cm-2 regardless of the thickness of molybdenum trioxide, maintaining a high carrier mobility of 8155 cm2 V-1 s-1. Molybdenum trioxide-induced compressive strain in graphene increased up to -0.6% with increasing molybdenum trioxide thickness. The asymmetrical band distortion of molybdenum trioxide-deposited graphene at the Fermi level led to in-plane electrical anisotropy with a high conductance ratio of 1.43 owing to the strong interlayer interaction of molybdenum trioxide-graphene. Our study presents a symmetry engineering method to induce anisotropy in symmetric two-dimensional (2D) materials via the formation of asymmetric superlattices with epitaxially grown 2D layers.
RESUMEN
Neuromorphic systems, which emulate neural functionalities of a human brain, are considered to be an attractive next-generation computing approach, with advantages of high energy efficiency and fast computing speed. After these neuromorphic systems are proposed, it is demonstrated that artificial synapses and neurons can mimic neural functions of biological synapses and neurons. However, since the neuromorphic functionalities are highly related to the surface properties of materials, bulk material-based neuromorphic devices suffer from uncontrollable defects at surfaces and strong scattering caused by dangling bonds. Therefore, 2D materials which have dangling-bond-free surfaces and excellent crystallinity have emerged as promising candidates for neuromorphic computing hardware. First, the fundamental synaptic behavior is reviewed, such as synaptic plasticity and learning rule, and requirements of artificial synapses to emulate biological synapses. In addition, an overview of recent advances on 2D materials-based synaptic devices is summarized by categorizing these into various working principles of artificial synapses. Second, the compulsory behavior and requirements of artificial neurons such as the all-or-nothing law and refractory periods to simulate a spike neural network are described, and the implementation of 2D materials-based artificial neurons to date is reviewed. Finally, future challenges and outlooks of 2D materials-based neuromorphic devices are discussed.