RESUMEN
This paper focuses on the residual stress in a lithium niobate (LN) film layer of a LN-on-insulator (LNOI)/Si hybrid wafer. This stress originates from a large mismatch between the thermal expansion coefficients of the layers. A modified surface-activated bonding method achieved fabrication of a thin-film LNOI/Si hybrid wafer. This low-temperature bonding method at 100 °C showed a strong bond between the LN and SiO2 layers, which is sufficient to withstand the wafer thinning to a LN thickness of approximately 5 µm using conventional mechanical polishing. Using micro-Raman spectroscopy, the residual stress in the bonded LN film in this trilayered (LN/SiO2/Si) structure was investigated. The measured residual tensile stress in the LN film layer was approximately 155 MPa, which was similar to the value calculated by stress analysis. This study will be useful for the development of various hetero-integrated LN micro-devices, including silicon-based, LNOI-integrated photonic devices.
RESUMEN
Lithium niobate-on-insulator (LNOI) waveguides fabricated on a silicon wafer using a room-temperature bonding method have potential application as Si-based high-density photonic integrated circuits. A surface-activated bonding method using a Si nanoadhesive layer was found to produce a strong bond between LN and SiO2/Si at room temperature, which is sufficient to withstand both the wafer-thinning (LN thickness <5 µm) and surface micromachining processes used to form the strongly confined waveguides. In addition, the bond quality and optical propagation characteristics of the resulting LNOI waveguides were investigated, and the applicability of this bonding method to low-loss LNOI waveguide fabrication is discussed. The propagation loss for the ridged waveguide was approximately 2 dB/cm at a wavelength of 1550 nm, which was sufficiently low for the device application. The results of the present study will be of significant use in the development of fabrication techniques for waveguides with any bonded materials using this room-temperature bonding method, and not only LN core/SiO2 cladding waveguides.
RESUMEN
This paper demonstrates the application of ultra-precision cutting to the fabrication of ridged LiNbO3 waveguides for use in low-loss photonic integrated circuits. Ridged waveguides with sidewall verticality of 88° and ultra-smooth sidewalls were obtained in LiNbO3 crystals using this technique. In addition, the possibility of fabricating bent ridged waveguides via this mechanical micromachining method was examined. The root mean square surface roughness of the machined sidewall was 4.5 nm over an area of 2.5 × 10 µm, which is sufficiently low so as to minimize scattering losses of guided light. The propagation loss of the ridged waveguide produced during this work was well below 1 dB/cm at a wavelength of 1550 nm. The present technique should have significant applicability to the micromachining of ferroelectric materials and the fabrication of highly confined optical waveguides such as ridged waveguides and photonic wires.
RESUMEN
The effect of the nanosecond laser annealing on the photoluminescence (PL) property of phosphorus ions (P(+)) implanted ZnOnanorods (NRs) has been investigated. The nanosecond laser annealing was performed with the third harmonic of a Q-switched Nd:YAG laser (355nm, 10ns/pulse) at a fluence of 100mJ/cm(2). It turned out that nanosecond laser annealing is more effective in the recovery of the PL property compared with the thermal annealing using an electric furnace. As the results, the I-V characteristics of the p-n homojunctions along ZnO NRs showed rectifying property with a threshold voltage of approximately 6V.
RESUMEN
We describe the design, synthesis, and characterization of a supramolecular hybrid of gold nanometals and semiconducting single-walled carbon nanotubes (SWNTs) wrapped by a porphyrin-fluorene copolymer (1), as well as fabrication of a thin-film transistor (TFT) device using the hybrid. Photoluminescence mapping revealed that the copolymer selectively dissolved SWNTs with chirality indices of (8,6), (8,7), (9,7), (7,6), and (7,5); dissolution of (8,6), and (8,7) SWNTs was especially efficient. The solubilized SWNTs were connected to gold nanoparticles (AuNPs) via a coordination bond to prepare a supramolecular hybrid composed of AuNPs/copolymer 1-wrapped SWNTs, which were studied by atomic force and scanning and transmission electron microscopies. A fabricated TFT device using the semiconducting SWNTs/copolymer 1 shows evident p-type transport with an On/Off ratio of ~10(5). The transport properties of the TFT changed after coordination of the AuNPs with the SWNTs/copolymer 1.